A Compact Virtual-Source Model for Carbon Nanotube Field-Effect Transistors in the Sub-10-nm Regime-Part I Intrinsic Elements

摘要

We presents a data-calibrated compact model of carbon nanotube (CNT)field-effect transistors (CNFETs) based on the virtual-source (VS) approach,describing the intrinsic current-voltage and charge-voltage characteristics.The features of the model include: (i) carrier VS velocity extracted fromexperimental devices with gate lengths down to 15 nm; (ii) carrier effectivemobility and velocity depending on the CNT diameter; (iii) short channel effectsuch as inverse subthreshold slope degradation and drain-induced barrierlowering depending on the device dimensions; (iv) small-signal capacitancesincluding the CNT quantum capacitance effect to account for the decreasing gatecapacitance at high gate bias. The CNFET model captures dimensional scalingeffects and is suitable for technology benchmarking and performance projectionat the sub-10-nm technology nodes.